Toshiba Electronic Devices & Storage Corporation has launched four new 650V silicon carbide (SiC) MOSFETs built on its advanced 3rd-generation SiC technology. These new components come in a compact DFN8x8 surface-mount package and target various industrial applications, such as switched-mode power supplies and solar power conditioners. The models—TW031V65C, TW054V65C, TW092V65C, and TW123V65C—are now available in volume.
This release marks Toshiba’s first use of the space-saving DFN8x8 package for its 3rd-gen SiC MOSFETs, reducing size by over 90% compared to older packages like TO-247. The smaller form factor boosts power density and allows for lower parasitic impedance, which reduces switching losses.
The DFN8x8’s 4-pin layout supports a Kelvin connection for the gate drive signal, minimizing internal inductance and enabling quicker switching. For instance, the TW054V65C shows about 55% less turn-on loss and 25% less turn-off loss than earlier Toshiba models, helping improve overall power efficiency in systems.
Target Applications:
- Switched-mode power supplies used in servers, data centers, and telecommunications systems
- Electric vehicle (EV) charging infrastructure
- Photovoltaic inverters
- Uninterruptible power supply (UPS) systems
Key Features:
- DFN8x8 surface-mount package facilitates compact system design and supports automated assembly, with low switching losses
- Integration of Toshiba’s 3rd-generation SiC MOSFET technology
- Optimized balance of drift and channel resistance yields favorable temperature characteristics for drain-source On-resistance
- Low product of drain-source On-resistance and gate-drain charge
- Low diode forward voltage: VDSF = –1.35V (typ.) at VGS = –5V
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