onsemi has announced an expanded partnership with motion technology leader Schaeffler, marked by a key design win featuring onsemi’s newest EliteSiC silicon carbide MOSFETs. This cutting-edge technology will power Schaeffler’s traction inverter for a major global automaker’s next-generation plug-in hybrid electric vehicle (PHEV) platform.
The EliteSiC devices offer significantly lower conduction losses and outstanding short-circuit robustness, allowing for a compact, thermally efficient inverter that boosts overall system performance. With industry-leading low on-state resistance, this silicon carbide solution delivers peak power capabilities that outperform comparable technologies.
Thanks to this innovation, Schaeffler can create a high-performance traction inverter system that benefits end users through:
- Longer driving ranges due to improved energy efficiency
- Enhanced reliability with consistent operation and less maintenance
- Greater design flexibility enabled by a more optimized, compact form factor
As automakers prioritize energy efficiency and performance—even in cost-sensitive EV platforms—the shift away from traditional insulated-gate bipolar transistors (IGBTs) toward advanced silicon carbide-based architectures is accelerating. onsemi’s leadership in SiC technology positions Schaeffler to meet these demanding requirements with state-of-the-art EV systems.
