RIR Power Electronics Limited (BSE-listed) has expanded its product lineup with new Silicon Carbide (SiC) MOSFETs, designed for high efficiency and reliability.
These MOSFETs are ideal for a wide range of applications, including EV onboard chargers and charging infrastructure, traction inverters, MW Charging Systems (MCS), solar inverters, energy storage, UPS systems, power supplies, motor drives, test equipment, welding, and various industrial machinery.
In addition to MOSFETs, RIR recently launched Merged-PiN Schottky (MPS) Diodes. These are engineered for demanding environments such as electric and hybrid vehicles, data centers, AI infrastructure, renewable energy and grid systems, industrial drives, aerospace and defense, as well as green hydrogen and electrolysis systems—where efficiency, durability, and thermal performance are essential.
Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics Ltd, said: “With the addition of 1200V SiC MOSFET to our portfolio, we are advancing the accessibility and reliability of high-performance Silicon Carbide solutions for next-generation power applications. Backed by decades of expertise in high-power semiconductors, we empower designers globally to confidently unlock the full potential of SiC efficiently and at scale across demanding segments such as electric vehicles, data centres, renewable energy, and industrial systems.
Decades of high-power semiconductor leadership
RIR brings over 55 years of high-power semiconductor expertise to its SiC portfolio and is uniquely positioned as India’s only player with existing high-power semiconductor fabrication capability, with proven experience in devices rated up to 20,000V and 12,000A. Supported by global development operations in the U.S. and its forthcoming first-of-its-kind SiC manufacturing campus in Odisha, India, RIR is building a vertically integrated SiC ecosystem spanning device design, wafer processing, packaging, and application support, enabling the delivery of high-voltage, high-reliability SiC MOSFETs and diodes optimized for electrical performance, manufacturability, and long-term system reliability.
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