Magnachip Unveils 8th-Gen 12V BatteryFETs

The new BatteryFETs cut heat and boost current density, supporting fast charging and compact smartphone battery designs.

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Magnachip Semiconductor has launched two new 8th-generation ultra-low Rds(on) 12V low-voltage MOSFETs for high-performance smartphone battery protection circuits (PCMs). Designed to support faster charging and improved power efficiency, these new components strengthen the company’s BatteryFET lineup and its presence in the mobile power semiconductor market. One of the MOSFETs is already in mass production and being supplied to a major global smartphone maker, confirming its reliability and performance.

As modern smartphones adopt AI features and more powerful applications, managing power consumption and heat has become increasingly important. The new MOSFETs address this need by offering low resistance, high current handling, and efficient operation in compact spaces—key requirements for today’s tightly packed mobile designs, including foldable and rollable devices.

These devices act as key switching components in battery protection systems, supporting functions like overcharge and over-discharge protection as well as regulating charge and discharge currents. By reducing on-resistance within the same package size, they help lower heat output and improve energy efficiency.

For example, the MDWC12D013PERH delivers over 50% lower on-resistance than the previous generation, reducing operating temperatures by up to 10°C under similar conditions. This helps extend battery life and improve charging stability.

The improved design also increases current density and maintains pin compatibility, making it easier for manufacturers to integrate the components into existing systems while saving PCB space and potentially reducing costs or enabling slimmer device designs.

Based on Magnachip’s 8th-generation technology, the MOSFETs use a high-density trench cell structure that cuts specific on-resistance by about 48% and boosts current density by roughly 185%, achieving typical Rds(on) levels below 1 mΩ.

Looking ahead, the company plans to expand its low-voltage MOSFET range with 22V ultra-low Rds(on) products and will present these innovations at PCIM Europe 2026 in Nuremberg.

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