Innoscience has announced that its current gallium nitride (GaN) power semiconductor portfolio remains unaffected by the recent patent rulings issued by the Munich Regional Court in Germany involving patents asserted by Infineon. The company said the court confirmed that its GaN products currently available on the market do not fall within the scope of the disputed German patents, allowing them to continue being sold and distributed in Germany without restrictions.
The dispute relates to patents covering GaN device packaging technology. Innoscience noted that the German cases involve patents from the same family previously reviewed by the U.S. International Trade Commission (ITC). In its final decision issued last month, the ITC determined that Innoscience’s current products do not infringe the U.S. patent asserted by Infineon concerning packaging technology.
According to the company, the Munich court reached a comparable conclusion, finding infringement only for a small number of older GaN transistor products rated between 650 V and 700 V that used legacy packaging. Innoscience stated that these products had already been discontinued before the court rulings and are no longer part of its active product lineup. As a result, the company said any injunction would have no impact on its existing portfolio, business operations, or customers in Germany.
Innoscience also pointed to recent legal developments in other regions, including a favorable ITC decision in the United States and a ruling in China that granted the company an injunction and damages against Infineon. It believes these outcomes reinforce the continued availability of its current GaN products in major global markets.
While several legal matters, including patent validity proceedings in Germany, are still ongoing, Innoscience maintains that its core product portfolio remains unaffected. The company said court decisions across different jurisdictions have consistently supported the compliance of its current technologies with applicable intellectual property requirements.
Looking ahead, Innoscience reaffirmed its commitment to advancing GaN technology and strengthening its global market presence by developing high-efficiency power semiconductor solutions designed for applications demanding greater power density and faster switching performance.
