Vishay Intertechnology has expanded its power semiconductor portfolio with four new 40V TrenchFET Gen IV standard-level n-channel MOSFETs in a compact PowerPAK SO-8 package. Designed specifically for demanding motor control environments, the new Vishay Siliconix SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP feature a gate-source threshold voltage above 2.5V and a Qgd/Qgs ratio below 1.
These design enhancements help eliminate false gate-triggering while minimizing voltage fluctuations and gate noise, ensuring more stable and reliable operation. The MOSFETs are well suited for synchronous rectification and DC/DC conversion in applications such as BLDC motors, power tools, drones, and industrial automation systems.
The meet the requirements of specific applications, the SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP are available with a range of typical on-resistance values from 0.9 mΩ to 2.5 mΩ at 10 V, and gate charge values from 32.6 nC to 82 nC. The MOSFETs are 100 % RG– and UIS-tested, RoHS-compliant, and halogen-free.
Device Specification Table:
| Part # | SIR5402DP | SIR5404DP | SIR5406DP | SIR5408DP | |
| VDS | 40 | 40 | 40 | 40 | |
| VGS | ± 20 | ± 20 | ± 20 | ± 20 | |
| RDS(on) | @ 10 V (Typ.) | 0.9 mΩ | 1.55 mΩ | 1.9 mΩ | 2.5 mΩ |
| @ 10 V (Max.) | 1.2 mΩ | 1.85 mΩ | 2.5 mΩ | 3.2 mΩ | |
| Qg | 82 | 61.5 | 44 | 32.6 | |
| Qgs | 26 | 20 | 14 | 10.5 | |
| Qgd | 18 | 14.5 | 10.5 | 7.5 | |
| Qgd / Qgs ratio | 0.69 | 0.73 | 0.75 | 0.71 | |
| Vth(min) | 2.5 | 2.5 | 2.5 | 2.5 | |
| Package | PowerPAK SO-8 single | ||||
Samples and production quantities of the new standard-level MOSFETs are available now, with a lead time of 13 weeks.
