Infineon Technologies AG has introduced the TDA235E5 and TDA235E0, a new family of dual-phase smart power stages developed to support the increasing power-density demands of next-generation AI accelerators and vertical power delivery systems.
The devices combine Infineon’s OptiMOS 6 MOSFET technology with a dual-phase driver IC in a compact 6 × 6 × 0.8 mm³ package. With power density exceeding 2 A/mm², the new solutions establish a new benchmark for power-stage performance in high-current AI processor applications.
As hyperscalers and data-center operators expand their AI infrastructure, power delivery is becoming increasingly challenging. Systems need to handle higher currents while fitting into smaller physical spaces, making compact, high-density power solutions essential for future AI platforms.
“Infineon customers are designing AI systems that will define the next decade of computing infrastructure,” said Rakesh Renganathan, Vice President Power ICs at Infineon. “The TDA235E5 and TDA235E0 power stages give designers the power density, thermal performance, and design flexibility to move faster and build with confidence, backed by Infineon’s full AI server power delivery ecosystem.”
The two devices support up to 300 A peak current and 120 A total design current (TDC), making them well suited for next-generation AI xPU accelerators as well as conventional server CPUs in datacenter environments. Both lateral and vertical power delivery configurations are supported, providing the design flexibility required as the industry transitions toward vertical power module architectures in advanced AI processor packages. Superior thermal impedance from junction to top side enables efficient liquid cooling integration, a characteristic that is increasingly important as power levels per processor socket continue to rise and traditional air-cooled thermal budgets are exhausted. Combined with Infineon’s digital multiphase controllers, the power stages support flexible, scalable multi-rail architectures that reduce time to deployment in fast-evolving AI server platforms.
The TDA235E5 and TDA235E0 integrate into Infineon’s end-to-end AI server power delivery ecosystem, spanning the full power chain from grid interface to processor core rails. By combining the complementary strengths of silicon, silicon carbide, and gallium nitride, Infineon provides datacenter customers with a proven, scalable path to the highest efficiency, robustness, and power density available for AI-optimized infrastructure. The datacenter power delivery market is one of the semiconductor industry’s fastest-growing demand segments, driving Infineon’s continued product investment to serve this opportunity at the component level where power density requirements are most critical.
Availability
Engineering samples for TDA235E5 and TDA235E0 are now available for customer evaluation.
