The market for super high-power semiconductors is growing rapidly. The high-performance semiconductor industry is a leading source of high-technology products and solutions for the IoT and mobile markets. Typically, a semiconductor company offers products and services for embedded applications, digital media, telecommunications, defense, transportation, healthcare and other sectors. Semiconductors are used in everything from smart phones and laptops to lights and compact appliances. This extremely high-tech material has become one of the world’s most popular consumer products. With semiconductors, you have a high-powered device that is smaller and more affordable than its predecessors. While high-power semiconductors remain the heart of most electronics, there is still significant room for improvement in terms of both performance and value.
Power semiconductors are components that transfer energy from one form to another at various stages between energy generation and consumption. A power semiconductor component can be a discrete transistor, thyristor, or diode;
Power switches and rectifiers (diode) are examples of power semiconductors used in power management systems. MOSFETs, IGBTs, and BJTs are examples of power switches. These are available in two varieties. Discrete Power Semiconductors: Only one type of device contained in a single package used for specific function to perform. Integrated Power Semiconductors: These devices are integrated with other circuits in a single package and may be placed in a multi-chip module, or MCM package, which is interconnected with other devices in the same package. These are used for specific application.
High voltages and large currents may be handled by power semiconductors. They have a different structure than normal semiconductors, allowing them to withstand high voltages and huge currents without harm. Failures may occur as a result of temperature rises caused by heat created by handling high power. As a result, research is going on to find ways to decrease the amount of power semiconductor loss, which is the source of the heat, also releasing the created heat to the outside.
They are mostly used in power conversion circuits such as AC to DC, DC to DC, SMPS and many more. As they play a huge and indispensable role in accurately driving motors from low to high speeds, supplying power grids with power generated from solar cells with less power loss, and providing a stable source of electricity to various home appliances and electrical equipment. The need for energy savings and power consumption reductions, results an increase in the need for power semiconductors that reduce power loss and reliability. Increase your competitive edge and market share in the sectors you target by improving the switching speed, recovery periods, and other electrical characteristics of your silicon wafers, diodes, or IGBTs.
Some of the main application of Power semiconductors:
High speed switching: High speed switching is a critical requirement for many digital systems because it allows one circuit to be switched rapidly from one state to another without waiting for a second or third circuit to finish converting an output from one form to another. The switching speed of a semiconductor might fluctuate due to temperature changes and other factors, and these factors must be examined in evaluate the measurements of new device. Semiconductors are most commonly used in applications that require high switching speed, such as logic gates, transistors, and optical circuits. These materials are used in transistors as well as photodiodes and light-emitting diodes (LEDs) to name a few examples. The ongoing need for smaller-sized, greater-power-density power electronics systems necessitates the development of power semiconductor devices capable of increasingly higher frequencies, voltages, and temperatures.
High voltage motor drives: A high power semiconductor motor drive system delivers continuous high power to the attached shaft or axles without losing torque. It is designed for applications requiring high torque & continuous speed, such as high-speed hydraulic pumps, hydraulic jack lift trucks, aerial photography equipment, wind turbine generators, compressors and air conditioning systems. Post-silicon power semiconductor technologies are also having a significant influence on motor drive applications. High voltage motor drives can become simpler and less expensive. The 7200 Vrms drive, which will use a 15 kV SiC chip, will use a basic two-level architecture to increase reliability and minimize currents.
Flexible AC transmission system (FACTS): a system made of static equipment used for the transfer of electrical energy via alternating current (AC). Its purpose is to improve network controllability and power transmission capabilities. In general, it is a power electronics-based system. FACTS Improves the dependability of alternating current grids while lowering power delivery costs. They enhance electricity transmission quality and efficiency by delivering inductive or reactive power to the grid.
High temperature operating compatibility: Thermal management system can significantly affect the functionality and stability of the chip equipment. High temperature operating compatibility ensures semiconductors can be used in products without impacting their performance at higher temperatures. Components made for high power semiconductors do not require extra cooling and may be used in applications where higher power is needed without generating extra heat. We are seeing more and more advanced devices with integrated circuits that use nanotechnology. The integrated circuits are specifically designed to operate at elevated temperatures.
Manufacturing Technology
Bi-Polar and Bi-MOS Technology offers a complete range of high power semiconductors.
Electron Beam (E-Beam) processing based on radiation is a dependable and reproducible approach for customizing switching speeds (minority carrier lifetime management for power semiconductors) of various bipolar silicon power semiconductor devices such as IGBTs, SCRs, BJTs, and GTOs. This (heavy metal diffusion for lifespan control) has major benefits over traditional gold or platinum doping processes:
- The impact of E-Beam IR radiation is completely reversible by further annealing.
- High reproducibility and easily controllable homogeneity
- The ability to process not only wafers but also finished (packed) devices.
Power semiconductor devices:
Sic Products: Silicon Carbide (SiC) products are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Schottky Barrier Diode: These silicon carbide (SiC) Schottky diodes have negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Positive temperature coefficient for safe operation and ease of paralleling with 175 °C maximum operating junction temperature and Excellent surge capability ,Extremely fast, temperature-independent switching behavior makes it useful for Industrial motor drives, Switch-mode power supplies, Uninterruptible power supplies and EV charging stations.
SiC MOSFETs: this SiC MOSFET are extremely low gate charge and output capacitance, low gate resistance for high-frequency switching and Ultra-low on-resistance with RoHS compliant, Pb-free, and are Halogen-free. They are optimized for high frequency, high-efficiency applications with extremely low gate charge and output capacitance. With Low gate resistance for high-frequency switching and ultra-low on-resistance makes them usable for Solar Inverters, Switch Mode Power Supplies, UPS systems, Motor Drives, High Voltage DC/DC Converters and Battery Chargers and Induction Heating.
Ignition IGBTs: Ignition Insulated Gate Bipolar Transistor (Ignition IGBT) technology features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Ignition, Direct Fuel Injection, and other applications requiring high voltage and high current switching are among the most common. Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load with Integrated ESD Diode Protection and Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices. Low Saturation Voltage and High Pulsed Current Capability make it useful for Ignition Systems, Direct Fuel Injection, Coil-on-Plug and Driver-on-Coil. Heavily used in Automotive Industry.
Reverse Conducting IGBTs (BiMOSFETs): These devices combine the strengths of a MOSFET and an IGBT. They have a positive temperature coefficient and low conduction losses making them ideal solutions for high frequency, high power density applications. BiMOSFETs have been a huge success because of non-epitaxial architecture and innovative manufacturing techniques. Because of the positive voltage temperature coefficient of both its saturation voltage and the forward voltage drop of its intrinsic diode, these high voltage devices are excellent for parallel operation. Power supply for radar transmitters, Modulators of radar pulses, Circuits for discharging capacitors, High-voltage power sources are some of the application of Reverse conducting IGBTs.
Discrete Thyristors (SCR and TRIAC): these areSolid state switches used to control the flow of electrical current often used for circuit protection in home appliance, electrical tool and outdoor equipment applications. Thyristors are often used in AC circuits, motor speed controllers, light dimmers, pressure-control systems, and other electronic components.
SCRs: They have a short turn-off time (tq), which is necessary for applications such as power inverters, switching regulators, and high frequency pulse circuits. These SCRs with quick turn-off times have high dv/dt and di/dt properties, which are required in higher frequency (>1000 PPS) switching circuits. Quick turn-off time SCRs are well-suited for multi-phase voltage regulator circuits, DC/AC inverters, and higher frequency pulse power supply. Glass-passivated SCR junctions guarantee long-term dependability and parametric stability and RoHS compliant they are best suited for high temperature application. Best suited applications for SCR are ground fault circuit interrupters and gas ignition.
Market Share:
According to the Indian Electronics and Semiconductor Association, the country’s semiconductor component market is expected to be worth USD 32.35 billion by 2025, registering a CAGR of 10.1% (2018-2025). The country is a lucrative destination for global R&D centers. Thus, the government’s ongoing Make in India initiative is expected to result in investments in the semiconductor market.
