CEA-Leti will highlight its most recent research advances in several fields at the 2024 International Electron Devices Meeting (IEDM), Dec. 7-11, at the Hilton San Francisco Union Square. Presentations include three R&D firsts:
- ferro-based memory scaling integrated into the back-end-of-line (BEOL) at the 22nm FDSOI technology node
- an integrated phase modulator and sensor (IPMS) offering improved scalability, compactness, and intrinsic optical alignment for digital optical phase conjugation (DOPC) applications, and
- the first adaptation of the forward-forward algorithm for resistive memory.
“CEA-Leti, together with its academic and industrial partners, will present cutting-edge results in the fields of low-power components, quantum technologies, RF, heterogeneous integration, emerging memories, and new computing paradigms,” said Thomas Ernst, scientific director, CEA-Leti.
CEA-Leti Papers
- “A 58×60 π/2-Resolved Integrated Phase Modulator And Sensor With Intra-Pixel Processing”, by Arnaud Verdant
Session 8.1: Monday, Dec. 9 @ 1:35 p.m. (Continental 7-9)
- “CMOS compatible 200 mm GaN-on-Si HEMTs for RF switch applications with 36 dBm CW power handling and 200 fs RonCoff”, by Luca Lucci
Session 9.4: Monday, Dec. 9 @ 2:50 p.m. (Imperial A)
- “FDSOI Platform for Quantum Computing”, a collaborative paper with Bruna Paz of Quobly
Session 10.6: Monday, Dec. 9 @ 4:05 p.m. (Imperial B)
- “Hf0.5Zr0.5O2 FeRAM scalability demonstration at 22nm FDSOI node for embedded applications”, by Simon Martin
Session 11.2: Tuesday, Dec. 10 @ 9:30 a.m. (Grand Ballroom A)
- “Edge Continual Training and Inference with RRAM-Gain Cell Memory Integrated on Si CMOS”, a collaborative paper with Shuhan Liu of Stanford University
Session 15.3: Tuesday, Dec. 10 @ 9:55 a.m. (Continental 5)
- “Forward-Forward Learning Exploiting Low-Voltage Reset of RRAM”, a collaborative paper with Bastien Imbert of Aix-Marseille University / CNRS
Session 13.4: Tuesday, Dec. 10 @ 10:45 a.m. (Continental 1-3)
- “Fine characterization and Modeling of the Frequency Dependence of TDDB in RF domain (F>10GHz)”, by Alexis Divay
Session 34.7: Wednesday, Dec. 11 @ 12 p.m. (Continental 5)
Leti Devices Workshop
This year’s theme for this annual event at IEDM’s December conference is From materials to system innovations, shaping the future of global connectivity. It will begin at 5:30 PM, Dec. 8, at the Nikko Hotel, 3rd floor (directly opposite the Hilton hotel).
GlobalFoundries Vice President Product Management Jamie Schaeffer will deliver the keynote address on Future directions and applications of FD-SOI.
Presentations
- Thomas Signamarcheix, CEA-Leti Executive Vice President, Technology Planning & Strategic Programs, Chairman & Master of Ceremony
- FAMES Pilot Line: Towards energy-saving chips for digital, analog, RF
Jean-René Lèquepeys, Deputy CEO & CTO, CEA-Leti
- Boosting connectivity with advanced 3D heterogeneous integration
Xavier Garros Research Engineer, CEA-Leti
- 3D sequential devices: from energy efficient computing to RFIC analogue stacking
Daphnée Bosch, Research Engineer, CEA-Leti
- CMOS compatible GaN integration for enhanced connectivity and sensing
Luca Lucci, Research Engineer, CEA-Leti
- Key enabling technologies for next generation wireless systems in the mmw/sub-THz bands
Cédric Dehos, Expert in mmw architecture and system design, CEA-Leti
- Advanced RF filters for wireless communications
Sami Oukassi,Head of laboratory for RF and energy devices, CEA-Leti
A networking reception follows from 7-9 PM.
Register for Leti Devices Workshop here.
IEDM is the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling.
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