Efficient Power Conversion (EPC) has started large-scale manufacturing of the EPC2366, marking its first seventh-generation (Gen 7) eGaN power transistor. The new device delivers a significant leap in performance, offering up to three times the efficiency of comparable silicon MOSFETs.
Designed to minimize both conduction and switching losses, the EPC2366 features a typical RDS(on) of 0.84 mΩ and an optimized RON × QG figure of merit of 12.6 mΩ·nC, while also improving thermal performance. It targets high-efficiency, high-power-density applications such as synchronous rectifiers, compact DC-DC converters, AI server power supplies, and advanced motor drives.
The transistor supports drain-to-source voltages up to 40 V, with transient capability to 48 V. It can handle continuous drain currents up to 88 A at VGS = 5 V and pulsed currents as high as 360 A (300 µs). Housed in a compact 3.3 × 2.6 mm PQFN package with a backside thermal pad, the device achieves a low junction-to-case thermal resistance of 0.6 °C/W, enabling dense, high-power operation.
To support evaluation and system integration, EPC also offers the EPC90167 half-bridge evaluation board. The 40-V, 25-A board incorporates two EPC2366 devices in a half-bridge layout, accepts standard PWM control signals, and provides flexible input options as a practical reference design.
The EPC2366 is currently available in volume quantities through EPC’s worldwide distribution network and direct sales, allowing customers to scale their designs for data center power supplies, synchronous rectification, motor drives, and other applications that demand compact, efficient power conversion.
