Wolfspeed has introduced a 10 kV silicon carbide (SiC) power MOSFET, which the company says is the first commercially available device in this voltage category. The new component expands the use of Silicon Carbide technology into higher-voltage power-conversion applications, supporting systems used in grid infrastructure, industrial electrification, and large computing facilities.
The device, CPM3-10000-0300A SiC MOSFET, is designed to improve reliability and efficiency in advanced power conversion systems. According to the company, testing based on Time-Dependent Dielectric Breakdown (TDDB) suggests the device could achieve an operational lifetime of about 158,000 years under a constant 20-volt gate bias. Its design also addresses Bipolar Degradation, a common limitation in high-voltage SiC MOSFETs, enabling reliable use of the body diode during switching operations.
With a 10 kV rating, the MOSFET allows engineers to simplify power converter designs. Systems that previously required multiple lower-voltage devices connected in series or complex multi-cell structures can potentially use a single higher-voltage switch. This can reduce component counts and allow some systems to move from multi-level inverter designs to simpler two-level architectures.
Compared with traditional Insulated-Gate Bipolar Transistor (IGBT) solutions, higher-voltage SiC devices can operate at significantly higher switching frequencies. In some applications, frequencies can increase from hundreds of hertz to several kilohertz, enabling smaller magnetic components, higher power density, and energy conversion efficiencies approaching 99%.
The device also features extremely fast switching performance, with rise times under 10 nanoseconds. This capability allows it to be used in solid-state switching systems that can replace mechanical Spark-Gap Switch technology. Unlike spark-gap devices that degrade through repeated electrical arcing, solid-state SiC switches provide precise timing and longer operational life.
Potential applications include pulsed-power systems for geothermal energy extraction, semiconductor manufacturing processes such as plasma etching, power infrastructure for large data centers, and certain chemical production systems. The CPM3-10000-0300A is currently available as a die for customer sampling and evaluation.
