Infineon Technologies has announced that Chicony Power, a leading global manufacturer of notebook power adapters, has chosen its CoolGaN G5 transistors for use in several laptop adapters developed for a major notebook brand. The adoption highlights how Gallium Nitride (GaN) power semiconductors are helping create smaller, more energy-efficient charging solutions, supporting compact designs and improved sustainability for modern laptops.
The new adapter designs are built around Infineon’s CoolGaN G5 devices, which are optimized for fast switching and low power losses under a wide range of operating conditions. These high-voltage GaN transistors use Infineon’s Gate Injection Transistor (GIT) architecture with a hybrid-drain structure, enabling strong gate robustness, improved dynamic resistance performance, and higher saturation current. This design enhances reliability and switching performance in power applications.
Compared with the previous generation, the latest G5 devices deliver up to 30% improvement in key performance metrics such as RDS(on) multiplied by gate charge (Qg), making them more efficient for high-power notebook adapters.
“The CoolGaN Transistors G5 embody our commitment to reliable, high-performance power semiconductors. Partnering with Chicony Power on the top customer’s adapter underscores how GaN enables tangible end-user benefits – smaller size, faster charging, and lower energy consumption – without compromising robustness,” said Johannes Schoiswohl, Head of the GaN Business Line at Infineon.
“Infineon’s CoolGaN Transistors G5 give us the design headroom to push power density and efficiency into a compact footprint. This collaboration helps deliver charging solutions aligned with the premium user experience our notebook customers expect,” said Yang Wang, VP R&D of Chicony Power.
Engineering highlights driven by Chicony Power design capabilities with use of Infineon’s HV G5 GaN transistors include a high frequency power architecture with optimized PFC and DC/DC stages leveraging GaN’s fast switching feature, an EMI-aware design whereby layout, filtering, and switching profiles are tuned to deliver low noise and strong compliance margins, and thermal optimization enabling cooler operation and sustained output at 100-300 W in compact mechanical envelopes.
Infineon has a strong portfolio with more than 40 new GaN product announcements in the last year and is a preferred partner for customers seeking high-quality GaN solutions. The company is on track with its implementation of scalable GaN manufacturing on 300-millimeter wafers with first samples already being shipped to customers. 300 mm GaN enables higher production capacity and faster delivery of high-quality GaN products which further strengthens Infineon’s position in the GaN market.
