The Full Commission of the U.S. International Trade Commission (ITC) affirmed the ITC’s initial determination from December 2025 that Innoscience infringed an Infineon patent concerning gallium nitride (GaN) technology and ordered import and sales bans against Innoscience. The ITC Commission’s final decision and the bans are subject to a 60-day review period of the US President.
“This decision once again highlights the robustness of Infineon’s intellectual property. It reinforces our commitment to actively protect Infineon’s patent portfolio and uphold fair competition in the industry,” says Johannes Schoiswohl, Senior Vice President and Head of GaN Systems Business Line at Infineon. “With our industry-leading 300-millimeter GaN manufacturing, we are uniquely positioned to scale innovation and deliver the performance, quality, and cost advantages that our customers need to accelerate decarbonization and digitalization,” he continues.
The ruling is yet another positive decision which underscores the value of Infineon’s contributions to GaN technology. In a parallel dispute in Germany, Infineon is asserting infringement of three patents and one utility model in the Munich District Court I (Landgericht München I). Already in August 2025, the Munich court found infringement of the first Infineon patent by Innoscience. Trials for another patent and a utility model are scheduled in June 2026.
Infineon is a leading integrated device manufacturer (IDM) in the GaN market with the industry’s broadest IP portfolio, comprising approximately 450 GaN patent families. GaN plays a pivotal role in enabling high-performance and energy-efficient power systems in a broad range of applications, including renewable energy systems, AI data centers, industrial automation, and electric vehicles (EVs). With higher power density, faster switching speeds, and lower power losses, GaN semiconductors enable smaller designs, reducing energy consumption and heat generation. As a leader in power systems, Infineon is mastering all three relevant materials: silicon (Si), silicon carbide (SiC) and gallium nitride.
