Toshiba has started sample shipments of its new TW007D120E 1200V trench-gate silicon carbide (SiC) MOSFET, developed for advanced AI data center power supplies and renewable energy systems. As AI-driven workloads continue to increase power demands in data centers, the industry is shifting toward high-voltage 800V HVDC architectures and more efficient power conversion technologies. Toshiba designed the new MOSFET to support these evolving requirements with improved efficiency and compact system designs.
The TW007D120E incorporates Toshiba’s proprietary trench-gate SiC MOSFET technology, delivering very low on-resistance per unit area. The company states that the device significantly cuts both conduction and switching losses. Compared to previous Toshiba solutions, the new MOSFET achieves around 58% lower on-resistance per unit area and improves the RDS(on) × Qgd performance metric by nearly 52%.
These enhancements help reduce heat generation and improve overall energy efficiency in AI data center power systems. The device is housed in Toshiba’s QDPAK package with top-side cooling capability, enabling better thermal management and supporting high-power-density power conversion designs.
Toshiba aims to begin mass production of the TW007D120E during fiscal year 2026 while continuing to broaden its SiC MOSFET lineup, including products targeted at automotive applications. The company believes its latest trench-gate SiC technology will contribute to higher energy efficiency and lower carbon emissions in data centers and industrial systems.
Beyond AI data center power supplies, the device can be used in photovoltaic inverters, UPS systems, EV charging infrastructure, energy storage equipment, and industrial motor control applications.
The TW007D120E offers several advantages, including low on-resistance, minimized switching losses, support for low gate drive voltages between 15V and 18V, and an advanced QDPAK package designed for efficient heat dissipation in high-power environments.
Toshiba noted that the development of the MOSFET builds on findings from the JPNP21029 project, which received support from the New Energy and Industrial Technology Development Organization.
