Infineon Technologies AG has launched the EiceDRIVER 2EDL90xG3, a 120 V common-footprint gate driver that allows both silicon (Si) and gallium nitride (GaN) power designs to be implemented on the same PCB.
As AI data centers continue to demand higher power density, engineers increasingly need the flexibility to compare and switch between Si and GaN solutions without redesigning circuit boards. The new 2EDL90xG3 is built to meet this requirement, supporting 48 V and high-voltage intermediate bus converter (HV IBC) applications while reducing design effort during technology evaluation.
It also features a unique 5 V gate clamp function that simplifies GaN gate driver power supply design and helps improve overall system efficiency.
The 2EDL90xG3 offers five configurable operating modes, enabling support for a wide range of power topologies. Its dual floating output architecture, combined with the 5 V gate clamp, enables hybrid switched capacitor (HSC) topology for both silicon and GaN designs. High driver strength of 4 A source and 6 A sink provides the flexibility required to drive the secondary side of HV-IBC stages. An integrated current sensing amplifier with high bandwidth of typically 5 MHz and high common mode voltage capability of up to 35 V reduces system bill of materials (BoM) and improves power density. The current sense amplifier delivers high accuracy of typically 1 percent at full scale, supporting precise control loop regulation as well as fast overcurrent and short-circuit protection. An integrated bootstrap diode further reduces board space and system BoM in half-bridge and full-bridge applications. The 2EDL90xG3 is offered in a compact 16-pin 3 mm x 3 mm QFN package.
The driver design is optimized for use with Infineon’s broad AI server power delivery portfolio, spanning the full power chain from grid to core. This includes solid-state transformers and circuit breakers, power supply and battery backup units, intermediate bus converters, and second-stage DC conversion power modules. By combining the complementary strengths of silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), Infineon offers customers a clear, proven path to end-to-end power architectures. The portfolio is supported by consistent design resources and scalable, high-quality components tailored to next-generation AI server platforms.
