Alpha and Omega Semiconductor has launched two new MOSFETs—the AONC40202 (25 V) and AONC68816 (80 V)—designed for high-power-density applications like intermediate bus converters (IBCs) in AI servers and data center power systems. Both come in a compact DFN 3.3 × 3.3 mm package featuring double-sided, source-down cooling to enhance thermal performance.
This dual-sided cooling design allows heat to dissipate from both the top and bottom of the device, lowering thermal resistance compared with traditional single-sided designs. A large top-clip drain connection further reduces top-side thermal resistance (Rth,c-top) to around 0.9 °C/W.
The AONC40202 handles continuous currents up to 405 A with a maximum junction temperature of 175 °C, making it ideal for high-current, low-voltage power stages where efficiency and thermal management are crucial. The AONC68816, rated at 80 V, targets higher-voltage stages in the same power architecture.
Both MOSFETs use a center-gate pin layout, which reduces gate-loop parasitics and simplifies PCB routing, while the source-down configuration increases contact area with the PCB, boosting both electrical and thermal performance.
These devices are optimized for high-efficiency DC-DC conversion in AI server power delivery, supporting higher current demands and tight thermal constraints driven by increasing compute density. Their combination of compact packaging and double-sided cooling enables higher-power-density designs while maintaining reliability.
The AONC40202 and AONC68816 are available now in production volumes, with typical lead times of 14–16 weeks.
 and AONC68816 (80 V)—designed for high-power-density applications like IBCs in AI servers and data center power systems.){kind=link}