Infineon Technologies has announced that its CoolSiC MOSFETs—silicon carbide (SiC) power MOSFETs—will be used in Toyota’s new bZ4X electric vehicle. The SiC MOSFETs are integrated into the on-board charger (OBC) and DC/DC converter, taking advantage of SiC’s low energy losses, high thermal resistance, and high voltage handling to improve driving range and reduce charging times.
Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon, stated that being selected by Toyota, one of the world’s largest automakers, highlights the importance of SiC technology in boosting EV efficiency, range, and performance. He added that Infineon’s commitment to innovation and zero-defect quality positions the company to meet the rising demand for power electronics in electric mobility.
Infineon’s CoolSiC MOSFETs feature a unique trench gate structure that reduces normalized on-resistance and chip size, enabling reductions in both conduction and switching losses to contribute to higher efficiency in automotive power systems. In addition, optimized parasitic capacitance and gate threshold voltage enable unipolar gate drive, contributing to simplification of drive circuits for automotive electric drive train and supporting high-density, high-reliability design for OBC and DC/DC converters.
