Innovative technologies and the inevitable progress in electronics miniaturization mean that manufacturers are increasingly introducing new, interesting solutions for designers and engineers into mass production. This translates into higher product quality and customer satisfaction. The case described here is no different.
The well-known and respected brand LITTELFUSE-IXYS, a pioneer in the power semiconductor market, can boast products from the Multi-Chip Configurations series. These are integrated in one package: a Super Junction CoolMOS N-MOSFET power transistor and FRED series diodes in HiPerDyn technology. The circuits are placed in through-hole (THT) packages and have five leads.
- FMD15-06KC5 has a boost chopper topology, with the series diodes on the drain side of the transistor.
- FDM47-06KC5 has a buck chopper topology, with the series diodes on the source side of the transistor.
So many components placed in one isolated, discrete package (isolated discrete package) ISOPLUS i4-PAC owe to the DCB technology (Direct Copper Bond). The DCB substrate can be modeled like printed circuit boards, which allows for the implementation of additional special functions. In this case, series connection of diodes. It saves space – replacing many discrete components with one system, less weight, easy assembly (screwless, thermal pad not required).
Other advantages of the circuits include reduction of parasitic inductance and capacitance as well as electromagnetic interference EMI, 2500V electrical isolation, low thermal resistance.
N-MOSFET Transistors from IXYS
| Characteristics | ||
|---|---|---|
| FMD15-06KC5 | FDM47-06KC5 | |
| Transistor Type | N-MOSFET | N-MOSFET |
| Drain-Source Voltage* | 600V | 600V |
| Drain Current* | 15A | 32A |
| Gate-Source Voltage* | ±20V | ±20V |
| On-State Resistance* | 165mΩ | 45mΩ |
| Topology | boost chopper | buck chopper |
| Package | ISOPLUS i4-pac™ x024a | ISOPLUS i4-pac™ x024a |
| Mounting | THT | THT |
* depending on the model and operating conditions
