Mouser Electronics, the authorized global distributor with the newest semiconductors and electronic components, announces a global distribution agreement with Efficient Power Conversion (EPC), a global leader in enhancement-mode gallium nitride (eGaN)-based power solutions, offering GaN devices spanning 15 V to 350 V. EPC’s eGaN FETs and integrated circuits deliver performance far beyond that of the best silicon (Si) power MOSFETs in applications including DC-DC converters, remote-sensor technologies such as lidar, motor control for e-mobility, robotics, drones, and more.
The agreement is aimed at expanding access to GaN technology for engineers worldwide and accelerating the adoption of high-efficiency power solutions.
“This global agreement with Mouser is part of our distribution strategy to engage with more engineers who are looking at designing with GaN because of the benefits it offers over silicon,” said Nick Cataldo, Senior VP Sales & Marketing of EPC. “Mouser has a fantastic global reach, and we are excited to be partnering with such a dynamic company.”
“EPC’s portfolio of high-performance power solutions is a strong complement to our line card and aligns well with the needs of our customers,” said Heather McGriff, Vice President of Supplier Management for Mouser. “We’re excited to build a successful long-term relationship and bring these innovative technologies to the global engineering community.”
The EPC2302, now available from Mouser, is a 1.8 mΩ max RDS(on), 100 V eGaN power transistor in a low-inductance 3 x 5 mm QFN package with an exposed top for excellent thermal management. It is designed for high-frequency DC-DC applications from 40 V to 60 V and for 48 V BLDC motor drives. The exposed top enhances top-side thermal management, and the side-wettable flanks ensure the entire side pad surface is wetted with solder during reflow, protecting the copper and enabling soldering on this external flank for easy optical inspection. The ultra-low capacitance and zero reverse recovery of the eGaN FET enable efficient operation in many topologies. Performance is further enhanced due to the small, low-inductance footprint.
The EPC2304 eGaN power transistor is designed to handle tasks where ultra-high switching frequency and low on-time are advantageous, as well as those where on-state losses dominate. The device is well-suited for motor drives, class D audio, wireless power, and power factor correction (PFC) converters. The EPC2304 is offered in a 3 x 5 mm thermally enhanced QFN package with an exposed top and ultra-low thermal resistance for cooler operation. The package also features wettable flanks to simplify assembly and inspection.
The EPC23102 ePower Stage IC integrates an input-logic interface, high-side level shifting, synchronous bootstrap charging, and gate drivers, along with eGaN output FETs, into a single monolithic integrated circuit in an MSL1 QFN package, using EPC’s proprietary GaN IC technology. The result is a power stage IC that translates logic-level control signals into a high voltage and high current power stage, which is simpler to design, smaller in size, and easier to manufacture, plus more efficient to operate. This device is ideal for motor-drive inverters, class-D audio amplifiers, half-bridge and full-bridge LLC converters, and more.
The EPC2305 is a 150 V eGaN power transistor that delivers lower switching losses and lower gate driver losses than the best-in-class Si MOSFETs, enabling higher power density through its enhanced efficiency, smaller size, and higher switching frequency, resulting in smaller inductors and fewer capacitors. Typical applications for the EPC2305 include phones, notebooks, gaming PCs, power tools, home robotics, e-mobility, and solar.
