Mouser Electronics, the authorized global distributor with the newest electronic components and industrial automation products, is now shipping the new NV60x GaNFast power FETs from Navitas Semiconductor. The NV60x GaNFast FETs are domestically produced, high-performance, enhancement-mode GaN power devices engineered for AI infrastructure, performance computing, industrial electrification, high-efficiency wireless charging, and critical security applications.
The NV60x GaNFast power FETs, available from Mouser, feature the combination of high dV/dt immunity (up to 200 V/ns), low‑profile SMT packages with bottom‑side cooling, ultra‑low gate charge, zero reverse‑recovery behavior, and minimized output charge to enable high‑frequency operation up to 10MHz across the series. The NV60x supports 700V continuous and 800V transient drain-to-source voltages, providing robust headroom for demanding AC-DC, DC-DC, and DC-AC topologies for AI, performance computing, and industrial electrification applications.
Each member of the NV60x family offers unique performance characteristics. The NV6012C delivers a low 430 mΩ resistance in a compact 5mm × 6mm PQFN package with bottom-side cooling and a Source-Kelvin pin for improved noise immunity. The NV6014 and NV6015C offer lower RDS (on) values of 260 mΩ and 150 mΩ respectively, supporting higher power densities in similarly compact packaging. The NV6017C further reduces on‑resistance to 120mΩ, delivering up to 13A continuous drain current at +25°C and maintaining low thermal resistance for efficient heat dissipation. The GaNFast family marks a major milestone for Navitas, bringing Navitas’ next-generation GaNFast technology into U.S. production and strengthening the domestic GaN ecosystem with high-efficiency power solutions for AI infrastructure.
