Navitas Semiconductor has expanded its 1200 V GeneSiC MOSFET lineup with two new package options: a top-cooled QDPAK surface-mount package and a low-profile TO-247-4L through-hole version. Both use the company’s fifth-generation trench-assisted planar SiC MOSFET technology and target high-power applications such as AI data center power supplies, grid infrastructure, and industrial electrification.
These new GeneSiC devices deliver enhanced switching performance and robustness. They offer roughly 35 % better RDS(on) × QGD performance and about 25 % improvement in the QGD/QGS ratio compared with previous generations. With a threshold voltage above 3 V, the MOSFETs are less prone to parasitic turn-on and provide stable switching in high-power converters.
The QDPAK package features top-side cooling that directs heat straight to a heatsink above the device, reducing thermal resistance compared with PCB cooling and allowing higher power density or smaller system designs. Its low parasitic inductance supports faster switching and greater efficiency at high frequencies.
Measuring approximately 15 mm × 21 mm with a 2.3 mm height, the QDPAK is suited for compact power converters and automated, high-volume assembly. It includes a molded groove that increases creepage distance to about 5 mm without reducing the thermal pad area. The epoxy molding compound has a comparative tracking index (CTI) above 600, supporting applications up to roughly 1000 VRMS.
The second package option is a low-profile TO-247-4L through-hole design with asymmetrical leads. This configuration reduces the vertical height above the PCB compared with conventional TO-247-4 packages, enabling higher power density in systems with limited vertical clearance, such as densely packed server power shelves used in AI data centers.
The asymmetrical lead configuration uses thinner gate, and Kelvin-source leads to improve assembly tolerances during PCB manufacturing. The package is intended for power electronics systems that require both high current capability and improved mechanical integration in compact designs.
A technical white paper describing the trench-assisted planar GeneSiC technology is available from the company’s website.
