Navitas Semiconductor has unveiled a 10 kW DC-DC power conversion platform tailored for next-generation AI data centers using 800 VDC and ±400 VDC distribution architectures. The platform supports switching frequencies up to 1 MHz and delivers peak efficiency of 98.5%, combining high power density with efficient energy conversion for large-scale data center applications.
The platform employs an all-GaN power stage that integrates 650 V and 100 V GaN FETs in a three-level half-bridge topology with synchronous rectification. In an 800 V-to-50 V configuration, it achieves 98.5% peak efficiency and 98.1% at full load. The module comes in a compact full-brick package (61 × 116 × 11 mm), offering a power density of 2.1 kW/in³.
Designed for production use, the platform supports both 800 V-to-50 V and ±400 V-to-50 V conversion at 10 kW, with integrated auxiliary power and control circuitry to minimize external components and simplify system integration. Navitas provides further insights on the role of GaN and SiC technologies in 800 VDC architectures in its white paper, “Redefining Data Center Power: GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure.”
Data center operators are evaluating the 10 kW platform through collaborative development programs. Navitas will showcase the solution at APEC 2026, taking place March 22–26 in San Antonio, Texas.
