Navitas Launches Isolated Through-Hole SiC MOSFET Package for Direct Cooling

Navitas Semiconductor has unveiled its new UHV-TO-247-4-ISO package, designed to enhance the performance of high-voltage silicon carbide (SiC) power devices. Built for 1200V to 3300V GeneSiC MOSFETs, the package combines a compact discrete design with features typically found in power modules.

The package offers more than 12 mm of creepage distance between pins and integrated isolation exceeding 6,000V, removing the need for additional high-voltage isolation components. Compared with conventional non-isolated through-hole packages, it also delivers improved thermal management and reduced electromagnetic interference (EMI). The new solution expands Navitas’ portfolio of advanced packaging technologies, including SiCPAK modules, QDPAK, and TO-247-LP, helping enable more efficient, higher-density, and scalable power systems for applications such as energy infrastructure, electrical grids, and AI data centers.

System Benefits:

• Integrated High-Voltage Isolation: By integrating an Aluminum Nitride (AlN) substrate, this package offers robust high-voltage isolation exceeding 6000 V — eliminating the need for external isolation materials and simplifying system design.
  
• Direct-Cooled, Reflow-Compatible Thermal Management: A high-voltage isolated, reflow-compatible thermal pad lets the package mount directly to liquid- or air-cooled heat sinks, eliminating external TIM. This reduces R_TH,J-HS by up to 60%, leading to up to 150% increased power dissipation capability, improving power density, reliability, manufacturability, and overall system cost.
  
• Reduced Coupling Capacitance & Radiated EMI: Integrated high-voltage isolation reduces die-to-heatsink stray capacitance compared to external ceramic-based isolators, effectively minimizing common-mode noise and radiated EMI. This enables higher switching speeds and delivers improved power density, increased system efficiency, and reduced system-level costs associated with EMI mitigation.
  
• Superior Power and Thermal Cycling Lifetime: Built on a high-performance AlN substrate with active metal brazing (AMB) technology and a robust reflow-compatible heatsink interface, this package eliminates the need for external TIM and isolation materials from the system stack – delivering superior power cycling capability and enhanced thermal cycling lifetime.
  
• Industry-Standard Form-Factor and Footprint: Compatible with the established high-voltage TO‑247‑4 form factor and lead geometry, this package allows effortless system integration with no redesign — while delivering superior performance, increased reliability, and lower total system cost.

“High-power system design is fundamentally challenged by the need to balance efficient thermal management with robust high-voltage isolation,” said Paul Wheeler, VP & GM of the SiC Business Unit at Navitas. “The UHV-TO-247-4-ISO package overcomes critical thermal and isolation challenges, delivering power module–class performance in a compact discrete form factor. As a highly efficient building block, it empowers system designers to unlock the full potential of GeneSiC TAP SiC MOSFET technology in next-generation applications such as immersion-cooled and liquid-cooled power electronics.”

Product Portfolio:

The UHV-TO-247-4-ISO package is offered in 3300V, 2300V, and 1200V SiC MOSFET ratings. This packaging breakthrough enables performance improvements in high-voltage grid-tied power conversion systems (PCS), solid-state transformers (SST), battery energy storage systems (BESS), and renewable energy applications.

The new package, together with its direct-cooled heatsink assembly, will be available at the Navitas Booth at PCIM Europe 2026, in Nuremberg, booth #544, Hall 9.