Navitas Semiconductor has formed a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC) to begin production and accelerate development of advanced 200mm GaN-on-silicon technology. This collaboration is aimed at scaling up Navitas’ high-performance GaN ICs to meet growing global demand for next-generation power electronics.
As part of the agreement, Navitas will manufacture its GaN ICs at Powerchip’s Fab 8B facility in Zhunan Science Park, Taiwan. The fab, which has been operational since 2019, already handles high-volume GaN production for applications like micro-LEDs and RF devices. By tapping into Powerchip’s manufacturing capabilities, Navitas expects to gain advantages in scale and efficiency.
Powerchip will leverage its enhanced 180nm CMOS process to support more compact and efficient device designs, improving integration, performance, and cost.
The deal covers Navitas’ GaN product range with voltage ratings from 100V to 650V, targeting key markets such as AI data centers and electric vehicles. Initial qualification of these devices is expected in Q4 2025, with volume production of the 100V line slated for the first half of 2026. Navitas also plans to shift its 650V product manufacturing from TSMC to Powerchip within the next 12 to 24 months.
This partnership aligns with Navitas’ broader push into high-growth markets. The company has recently launched several strategic initiatives targeting AI data centers, electric vehicles (EVs), and solar energy. Notably, Navitas is working with NVIDIA to develop GaN and SiC solutions for 800V high-voltage direct current (HVDC) systems, designed to support ultra-high-power IT infrastructure, including 1 MW racks. In the solar sector, Enphase has chosen Navitas’ 650V bi-directional GaNFast ICs for its upcoming IQ9 platform. Meanwhile, in the EV space, Changan Automobile has introduced its first commercial on-board charger (OBC) using Navitas’ GaNSafe technology.
