ROHM has created the TSC3PAK (14.00 × 18.58 × 3.50 mm) SiC MOSFET package, featuring a top-side cooling design where heat is released from the top of the device. This approach allows for automated assembly while delivering thermal performance similar to traditional through-hole packages like the TO-247-4L. As a result, it improves efficiency and reliability in power conversion systems such as onboard chargers (OBCs) and electric compressors used in xEVs.
In xEVs, the adoption of SiC devices is expanding beyond main inverters to include power conversion circuits such as OBCs and electric compressors to improve charging speed and extend cruising range. SiC devices are also increasingly being used in industrial equipment, including high-performance server power supplies and PV inverters, where high-efficiency operation is required.
Conventional SiC devices have generally relied on through-hole packages, which provide excellent heat dissipation during high-power operation. However, through-hole type devices involve manual mounting processes, and their form factor makes it difficult to achieve a lower package profile. Against this backdrop, surface-mount SiC devices compatible with automated mounting have begun gaining adoption. To address these issues, the new TSC3PAK delivers heat dissipation performance comparable to through-hole technology such as TO-247 in a surface-mount package.
The new package incorporates ROHM’s proprietary groove structure to secure a class-leading* creepage distance of 6.66mm, allowing it to accommodate an AC peak voltage of 1200 V in a Pollution Degree 2 environment while maintaining compatibility with products widely adopted in the market. By enabling safe insulation design in high-voltage applications, the TSC3PAK also contributes to reduced mounting costs and higher reliability.
Products using the new package incorporate ROHM’s 4th Generation SiC MOSFETs, achieving low ON resistance and high-speed switching characteristics. As a result, switching losses during power conversion are significantly reduced, contributing to greater application efficiency and lower power consumption.
Product Lineup
Application Examples
• Automotive Systems: Onboard chargers (OBCs), electric compressors
• Industrial Equipment: PV inverters, server power supplies
Terminology
Creepage Distance
The shortest distance between two conductive elements (terminals) along the surface of the device package. In semiconductor design, insulation measures with such creepage and clearance distances must be taken to prevent electric shocks, leakage currents, and short-circuits in semiconductor products.
Pollution Degree 2 Environment
Pollution Degree 2 corresponds to typical environments such as homes and offices where only dry, non-conductive contaminants are present. Pollution Degree is the grade of the environment that influences the determination of the spatial and creepage distances of components, classified from 1 to 4 according to the presence, amount, and condition of pollutants
