STMicroelectronics has expanded its STGAP3S galvanically isolated gate driver family with new 3 A devices designed for applications that require lower gate-drive current. The new additions complement the existing 6 A and 10 A versions, offering a cost-efficient option for controlling SiC MOSFETs and IGBTs in high-voltage power conversion systems.
The expanded lineup includes the STGAP3S3S for SiC MOSFET applications and the STGAP3S3IF for IGBT-based designs. Both devices support power systems with bus voltages up to 1,200 V, making them suitable for PFC circuits, DC-DC converters, inverters, and switch-mode power supplies used in EV chargers, energy storage systems, solar inverters, industrial equipment, and motor drives.
Built on the same platform as the existing STGAP3S products, the new drivers provide reinforced galvanic isolation certified to UL 1577 and IEC 60747-17 standards. They offer isolation withstand capability of up to 9.6 kV transient voltage and 200 V/ns common-mode transient immunity (CMTI) for reliable operation in demanding electrical environments.
A major feature of the 3 A devices is the integrated active Miller clamp with built-in clamping MOSFET, which helps prevent unwanted power switch turn-on during fast switching events. This reduces the risk of shoot-through currents while eliminating external clamp components, saving PCB space and lowering system costs.
The STGAP3S family also includes desaturation protection with soft turn-off, undervoltage lockout, thermal shutdown monitoring, diagnostic outputs, and support for negative gate drive voltages to improve switching reliability and system protection.
For design evaluation, ST provides dedicated half-bridge evaluation boards, including the EVLSTGAP3S3S and EVLSTGAP3S3IF, featuring integrated protection circuits, diagnostic indicators, and measurement points. The full STGAP3S series, including the new 3 A models, is available in an SO16W wide-body package.
