DG Matrix has doubled the power capacity of its Interport multi-port solid-state transformer platform, increasing it from 200 kW to 400 kW through the use of next-generation silicon-carbide (SiC) technology from STMicroelectronics. The upgrade has been achieved without a significant increase in the system’s physical footprint, highlighting the ability of wide-bandgap semiconductors to deliver greater power density in solid-state power-conversion equipment.
STMicroelectronics has worked with DG Matrix on SiC technology since the Interport platform was first developed. According to Dr. Subhashish Bhattacharya, co-founder and CTO of DG Matrix, the company achieved the higher power density by integrating ST’s Gen3 SiC MOSFETs. Their lower RDS(on) characteristics, combined with thermally optimized packaging, help improve system efficiency while allowing more power to be delivered from a compact design.
With the latest SiC devices, the Interport platform can support the higher 400 kW power level while maintaining efficiency above 98.5%. This increase in power density is particularly important for data centers, where the rapid growth of AI computing is pushing rack-level power requirements higher and creating demand for smaller, more efficient power-conversion systems.
The development also comes as data-center operators explore 800 V DC power architectures for high-density computing environments. DG Matrix, citing analysis from SemiAnalysis, estimates that around 39 GW of new data-center capacity could use 800 V DC architectures by 2030. Rising GPU rack power and the shift toward higher-voltage distribution are increasing the need for solid-state transformers capable of handling and converting large amounts of electrical power efficiently.
The DG Matrix–ST collaboration goes beyond supplying semiconductor components. ST has also provided engineering support to help optimize the SiC devices for the Interport system, including considerations related to voltage, current, and thermal performance. The devices offer high surge-current capability as well, which can be valuable in data-center environments where AI workloads can produce rapid changes in electrical demand.
The partnership also builds on Dr. Bhattacharya’s previous work with ST devices. Before co-founding DG Matrix, he developed power-electronics applications involving solid-state transformers for DC grids, traction motor drives, and auxiliary power DC-DC converters. He is also a founding faculty member of the FREEDM Systems Center and PowerAmerica, a U.S. Department of Energy institute focused on wide-bandgap semiconductor technologies, including SiC and GaN.
DG Matrix is continuing to expand its product roadmap, with plans for higher-voltage medium-voltage platforms and larger-scale deployments across hyperscale data centers, neocloud infrastructure, and electrification projects. The company also intends to integrate future generations of SiC technology into its Interport product family.
The upgraded platform is designed to support scalable power infrastructure for AI data centers, utility microgrids, and broader electrification applications. By combining higher power density with the efficiency and fast-switching capabilities of SiC-based power conversion, the technology is positioned for applications requiring compact and high-performance electrical power systems.
