Teledyne HiRel Launches New GaN Gate Driver

The integrated isolated bias supply and signal isolation simplify GaN-based power conversion for industrial and aerospace applications.

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Teledyne HiRel Semiconductors has launched the TDGD85110EP, an isolated single-channel GaN gate driver designed to make the integration of gallium nitride (GaN) power transistors easier in advanced power conversion applications. The device combines galvanic signal isolation and an isolated bias supply in one package, reducing the need for additional components while improving efficiency, reliability, and design flexibility.

As GaN technology continues to gain adoption in high-power and compact systems, designers require gate drivers that can support faster switching speeds, higher power density, and improved electrical performance. The TDGD85110EP is developed to address these needs by enabling reliable high-speed switching while offering strong noise immunity. Its integrated isolated bias supply removes the requirement for external secondary-side power supplies and high-side bootstrap circuits, helping simplify system designs.

The new gate driver helps reduce PCB complexity, lower component count, and speed up development for engineers working on next-generation power electronics. It is suitable for a wide variety of applications, including AC-DC and DC-DC converters, battery management systems, motor drives, EV fast-charging systems, UPS equipment, and aerospace and defense power solutions.

The TDGD85110EP delivers 5 kV RMS galvanic isolation and provides a common-mode transient immunity (CMTI) greater than 100 V/ns, allowing stable operation in high-frequency and electrically challenging environments. With a propagation delay of just 50 ns, the device supports precise switching control for high-performance converter designs. It also supports gate-drive voltages above 10 V for high-voltage applications and above 6 V for low-voltage inputs, ensuring compatibility with a broad range of GaN power transistors.

Built for demanding environments, the device undergoes AC and DC electrical testing across multiple temperature points and supports operation from -55°C to +125°C. These features make it well suited for mission-critical industrial, aerospace, and defense applications where long-term reliability is essential.

The TDGD85110EP is available now, with Teledyne HiRel offering evaluation hardware, design resources, and technical support to help engineers accelerate the development of GaN-based power conversion systems.