Vishay 1200 V SiC MOSFET Modules Boost Power Efficiency in SOT-227 Package

Vishay Intertechnology, has announced the release of five new 1200 V MOSFET power modules aimed at improving power efficiency in medium- to high-frequency automotive, energy, industrial, and telecom applications. Offered by Vishay Semiconductors, the VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120 integrate Vishay’s latest-generation silicon carbide (SiC) MOSFET technology in an industry-standard SOT-227 package.

Offered in single switch and low side chopper configurations, each power module released today features a SiC MOSFET integrated with a soft body diode offering low reverse recovery. The result is reduced switching losses and increased efficiency for solar inverters; off-board chargers for electric vehicles (EV); SMPS, DC/DC converters, UPS, and HVAC systems; large scale battery storage systems; and telecom power supplies.

The compact SOT-227 package of the VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120 allows the devices to serve as drop-in replacements for competing solutions in existing designs, enabling designers to adopt one of the newest SiC technologies without the expense of changing PCB layouts. The molded package also offers electrical insulation up to 2500 V for one minute, lowering costs by eliminating the need for additional insulation between the component and heatsink.

The power modules provide continuous drain current from 50 A to 200 A and low on-resistance down to 12.1 mΩ. The RoHS-compliant devices deliver high speed switching with low capacitance and offer a high maximum operating junction temperature of +175 °C.

Device Specification Table:

Samples and production quantities of the VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120 are available now, with lead times of 13 weeks.