VisIC Technologies is advancing its leadership in GaN (gallium nitride) power semiconductors with the launch of its second-generation 650V D³GaN devices. Building on the success of its first-generation and Gen 1+ products, the company continues to push for greater energy efficiency through consistent improvements in RDS(ON) performance.
VisIC’s first-generation GaN devices played a key role in introducing GaN to the automotive and industrial markets, offering low RDS(ON) values (22 mΩ to 8 mΩ) and outperforming traditional silicon in switching speed and efficiency. These products enabled compact, high-power designs and paved the way for wider adoption of GaN.
In response to growing demand for even more efficient solutions, the Gen 1+ devices reduced RDS(ON) to 6 mΩ, cutting conduction losses while maintaining switching performance. A standout product, the 650V V06DI065R1X13 die, delivers 170A and supports parallel use in power modules from 50 kW to 150 kW—ideal for EVs and AI-powered data centers that require high power density and efficiency.
The new Gen 2 devices mark a significant performance jump, with die sizes 33% smaller than Gen 1+ and 50% smaller than Gen 1. Featuring RDS(ON) as low as 4 mΩ, the flagship V04DI065R2X21 die handles up to 230A and is compatible with both soldering and sintering on AMB/DBC substrates. This makes it well-suited for high-power EV components like drivetrain inverters and onboard chargers, as well as for energy-demanding AI data centers.
Lower RDS(ON) means better efficiency, less heat, and reduced cooling needs—critical benefits for next-gen electric vehicles and advanced computing systems. VisIC’s Gen 1+ and Gen 2 bare dies are now available for testing, with top-cooled packaged versions arriving later this year. A half-bridge power module using multiple dies in parallel is also in development, expanding the reach of D³GaN technology in high-power applications.
