Nagoya University’s GaN-based e-Beam inspection and metrology technology, developed in collaboration with startup Photo electron Soul Inc. and the Amano-Honda Laboratory, will be tested by Kioxia Iwate Corporation in late September. This field evaluation aims to validate the system’s potential to improve semiconductor manufacturing by enhancing defect detection and root-cause analysis, ultimately boosting production yield.
As 3D flash memory becomes more complex with increasingly stacked structures, Kioxia is working to advance inspection and metrology methods that can handle these challenges. The GaN-based e-Beam technologies under review—photocathode e-Beam inspection and metrology—offer non-contact electrical inspection and precise measurements in deep, high-aspect-ratio structures where traditional tools fall short.
Key to this innovation are two advanced techniques: Digital Selective e-Beaming (DSeB) and Yield Controlled e-Beaming (YCeB), which allow for targeted e-Beam radiation and real-time control of beam intensity. These capabilities improve accuracy, reduce misalignment, and enable next-generation semiconductor inspection.
