1200 V QSiC Dual3 Modules Boost Converter Efficiency & Power Density

SemiQ, a global supplier of advanced silicon carbide (SiC) solutions, has introduced the QSiC Dual3 series—1200 V half-bridge MOSFET modules designed for high-performance motor drives, grid converters, and industrial power applications.

The QSiC Dual3 modules deliver industry-leading conversion efficiency and power density, and some models include an optional parallel Schottky barrier diode to reduce switching losses in high-temperature conditions. Two devices in the series offer an RDS(on) of just 1 mΩ and a power density of 240 W/in³ within a compact 62 × 152 mm package.

Designed for easy replacement of IGBT modules with minimal redesign, all MOSFET dies undergo wafer-level gate-oxide burn-in testing above 1,450 V. The modules also feature low junction-to-case thermal resistance, enabling simpler system designs with smaller, lighter heatsinks.

“Rising AI-driven power and thermal demands in data centers are pushing the limits of traditional cooling and power systems,” said Dr. Timothy Han, President at SemiQ. “With a flexible design and industry-leading power density, the QSiC Dual3 series supports 250 kW liquid chiller applications on both active front ends and compressor drives, reducing size and weight compared to traditional silicon IGBT solutions while delivering the full efficiency of SiC.”

The new lineup will be on display at the Applied Power Electronics Conference (APEC), from March 22 to 26. To find out more, please visit semiq.com or meet us in person at the show, Booth #1451.

Learn more about silicon carbide solutions for liquid cooling in AI data centers, and download datasheets for SemiQ’s QSiC Dual3 modules here.