Aratas America LLC, formerly OMRON Electronic Components, has launched the G3VH, a silicon carbide (SiC) MOSFET relay designed for high-voltage switching at 1,800V and 3,300V. The device combines high voltage endurance, low losses, fast switching, and a compact design.
The G3VH is aimed at applications across renewable energy, data centers, industrial automation, transportation, and semiconductor equipment, where efficient high-voltage switching is increasingly important. Its SiC MOSFET technology allows higher voltage operation than conventional silicon devices while supporting smaller system designs.
The relay features low ON resistance, low leakage current, strong dielectric isolation, and high-speed switching. These characteristics help minimize conduction losses and heat generation while maintaining reliable performance in demanding high-voltage environments.
Available in 1,800V and 3,300V versions, the G3VH provides 5,000Vrms dielectric strength between its input and output. It can be supplied with PCB terminals or as a surface-mount DIP 6-pin package, giving manufacturers greater flexibility in equipment design.
Aratas also highlights the relay’s potential to improve inspection and testing operations through better defect detection and more accurate conformance testing. Faster testing can increase throughput in semiconductor evaluation and electrical measurement equipment.
The G3VH is designed for semiconductor test systems, battery management equipment, measuring instruments, and other applications requiring precise high-voltage switching. Its combination of SiC performance and compact packaging can help manufacturers reduce equipment size without compromising electrical reliability.
With the G3VH, Aratas is extending SiC technology into high-voltage relay applications, offering equipment designers a combination of high voltage ratings, low power losses, rapid switching, and compact integration.
