NoMIS Power Corporation has launched its first-ever 3.3 kV silicon carbide (SiC) MOSFET, the N3PT080MP330, a planar device that delivers exceptional performance for medium-voltage power applications. With an on-resistance of just 80 mΩ at 34 A, this device achieves best-in-class efficiency and figures of merit, establishing a new standard in power electronics for demanding environments.
By expanding its proven SiC technology into higher voltage classes, NoMIS offers a high-performance alternative to traditional silicon-based solutions. The new MOSFET reduces switching losses, improves thermal management, increases power density, and delivers superior reliability compared to legacy silicon IGBTs—making it ideal for applications like battery energy storage systems (BESS), renewable energy inverters, electric transportation systems, and industrial motor drives.
To support a range of design needs, the MOSFET is being released alongside 160 mΩ SiC bi-directional switches, offering engineers more flexibility in tailoring system performance. NoMIS has also outlined a clear product roadmap, including a 50 mΩ (55 A) variant in 2025 and a 25 mΩ (109 A) version in 2026—each pushing performance even further within the 3.3 kV voltage range.
Samples of the N3PT080MP330 are now available via DigiKey, both as bare die (sorted by threshold voltage) and in discrete packaged formats. For customers with specialized requirements, custom device development and licensing at the 3.3 kV level is also available.
The N3PT080MP330 is built on NoMIS’s proprietary SiC architecture, which features a thicker gate oxide than industry norms. This design offers three key benefits:
- High efficiency and thermal stability up to 175 °C, avoiding the sharp efficiency drop-off seen in comparable silicon IGBTs.
- Flexible gate drive compatibility at +18 V and +20 V, making the device a drop-in replacement for many existing IGBT designs—without requiring an external anti-parallel diode.
- Enhanced reliability and fast switching performance due to reduced input capacitance and improved ruggedness, especially in high-temperature or high-altitude environments.
Notably, the N3PT080MP330 delivers industry-leading figures of merit, particularly in terms of RonCoss and RonCrss.
NoMIS Power will showcase this new device at ICSCRM 2025 (International Conference on Silicon Carbide and Related Materials), taking place September 14–19, 2025, in Busan, South Korea. Attendees will be able to meet NoMIS experts, explore the MOSFET’s capabilities in detail, and learn about opportunities for customization and licensing.
