onsemi has revealed a new partnership with GlobalFoundries (GF) to co-develop and produce next-generation gallium nitride (GaN) power devices. The products will leverage GF’s advanced 200mm enhancement-mode (eMode) GaN-on-silicon manufacturing process, starting with solutions rated at 650 volts.
The announcement follows GF’s recent acquisition of TSMC licenses for both 650V and 80V GaN-on-silicon technologies, alongside similar collaborations between GF and other major GaN chip suppliers.
This collaboration further expands onsemi’s extensive power semiconductor lineup, which now covers the full spectrum of GaN technologies. Its portfolio includes low-, mid-, and high-voltage lateral GaN devices, as well as ultra-high-voltage vertical GaN solutions. Together, these offerings give system designers greater freedom to build compact, high-power, next-generation power systems.
By working with GF, onsemi plans to speed up the development of high-performance GaN devices and highly integrated power stages. The partnership also strengthens onsemi’s high-voltage product range to meet the fast-growing power demands of AI data centers, electric vehicles, renewable energy installations, industrial systems, and aerospace, defense, and security applications.
As part of the effort, onsemi will integrate its silicon-based drivers, controllers, and advanced thermal packaging technologies with GF’s 650V GaN platform. The goal is to create optimized GaN power solutions that deliver higher power density and better energy efficiency.
The resulting devices are expected to be used in applications such as power supplies and DC-DC converters for AI data centers, EV onboard chargers and DC-DC converters, solar microinverters and energy storage systems, and motor drives and power converters for industrial and aerospace, defense, and security environments.
GaN technology enables operation at much higher switching frequencies, which improves efficiency while reducing component count, system size, and overall cost. Its natural bidirectional switching capability also allows new circuit designs that can replace multiple traditional unidirectional transistors, simplifying designs and lowering system expenses. Additionally, GaN supports high levels of integration, making it possible to combine power transistors with drivers, control, isolation, and protection features in a single package.
onsemi expects the first samples from this collaboration to be available in the first half of 2026.
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