Para Light Electronics has introduced its new ThermaFlat family of silicon carbide (SiC) MOSFETs, featuring the ThermaFlat I and ThermaFlat II series. The devices are aimed at high-power conversion applications where changes in on-resistance with temperature can increase conduction losses and make thermal management more challenging. Built around Para Light’s Ultra-Low RDS(on) Drift Technology, the MOSFETs are designed to improve efficiency, power density, and reliability in a range of electrification systems.
In standard SiC MOSFETs, on-resistance (RDS(on)) typically rises as junction temperature increases. This can lead to higher conduction losses and additional heat, requiring more demanding cooling solutions and potentially reducing system efficiency and reliability. Para Light’s ThermaFlat design addresses this issue by keeping RDS(on) more consistent over a broad temperature range while also supporting low switching losses.
Para Light reports that its 650 V, 21 mΩ TO-247 device shows only about an 8% change in RDS(on) as the junction temperature moves from -25°C to +125°C. According to the company, this lower temperature dependence can help systems retain efficiency under heavy loads, simplify cooling requirements, and enable greater power density. The 1200 V devices extend the same low-temperature-coefficient technology to higher-power conversion applications.
The ThermaFlat portfolio consists of two product families. ThermaFlat I offers 650 V and 1200 V devices in industry-standard packages, allowing designers to integrate them into existing converter architectures. ThermaFlat II adds the Ultra-Low RDS(on) Drift Technology to a high-VGS(th) design, which is intended to improve noise immunity and reduce the risk of unwanted turn-on. The MOSFETs also eliminate the need for a negative gate-off voltage supply, which can simplify gate-driver circuits, reduce component requirements, and potentially lower bill-of-materials costs.
The new devices are intended for applications including AI data centers and server power supplies, battery backup systems, UPS equipment, EV charging infrastructure, grid-connected energy storage, solar inverters, variable-frequency drives, and industrial automation.
Para Light is continuing to broaden its SiC MOSFET lineup with additional voltage ratings, current capacities, and package options. The company says its manufacturing approach combines high wafer yields, internal packaging capabilities, process controls, and supply-chain management to maintain consistent product quality and support reliable global availability.
