SemiQ has broadened its QSiC Dual3 lineup of half-bridge MOSFET modules by introducing new high-thermal-performance variants featuring aluminum nitride (AlN) substrates and pre-applied thermal interface material (TIM), along with additional 1700 V models. Designed for demanding high-voltage and high-efficiency applications, the expanded portfolio supports AC-DC converters and solid-state transformers (SSTs) used in AI data centre power systems, as well as grid-connected energy storage converters and industrial motor drives for cooling equipment such as chillers and cooling towers.
The family enables the creation of power converters with industry-leading conversion efficiency and power density. Additionally, the series includes an optional parallel Schottky barrier diode (SBD) to further reduce switching losses and improve efficiency in high-temperature environments. Several of the family’s devices exhibit RDSon as low as just 1 mΩ, alongside power levels of 1150A, 1200V from a 62 x 152 mm package.
The QSiC Dual3 has been developed to enable the replacement of IGBT modules with minimal redesign, with all MOSFET die being screened using wafer-level gate-oxide burn-in tests exceeding 1450 V. The modules additionally feature a low junction-to-case thermal resistance and enable a simplified system design with smaller, lighter heatsinks.
“Given that data centers require continuous, round-the-clock operation, maximizing efficiency is critical,” said Dr. Timothy Han, President at SemiQ, “The flexible design and industry-leading power density of our QSiC Dual3 series supports both active front-ends and compressor drives on liquid chiller applications, reducing size and weight compared to traditional silicon IGBT solutions while delivering the full efficiency of SiC.
“And with the new high-thermal-performance options, the modules are also now being designed into the main AC-DC power converters and SSTs. This enables direct conversion from medium-voltage 13.8 kV or 35 kV AC to high-voltage 800 V DC, delivering the ultra-efficient operation that modern data center power systems demand.”
The expanded range of high-thermal-performance options features AlN (aluminum nitride) substrates and pre-applied TIM (thermal interface material), carrying the suffix “-NT” on the standard part numbers. 1700 V 1.7 mΩ devices have also been added – GCMX1P7C170S4B1(-NT) and GCMS1P7C170S4B1(-NT) – and will be available in the coming months.
| Part Numbers | VDC | Package | SBD | RDSon |
| GCMX1P0B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | N | 1 mΩ |
| GCMX1P4B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | N | 1.4 mΩ |
| GCMX2P0B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | N | 2 mΩ |
| GCMS1P0B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | Y | 1 mΩ |
| GCMS1P4B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | Y | 1.4 mΩ |
| GCMS2P0B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | Y | 2 mΩ |
| GCMX1P7C170S4B1(-NT) | 1700V | S4B1 Half Bridge with AlN substrate and TIM | N | 1.7 mΩ |
| GCMS1P7C170S4B1(-NT) | 1700V | S4B1 Half Bridge with AlN substrate and TIM | Y | 1.7 mΩ |
The new lineup will be on display at PCIM in Nuremberg, Germany, from June 9 to 11. To find out more, please visit semiq.com or meet us in person at Alfatec’s stand (Hall 4A, Booth #110).
