Navitas Semiconductor has introduced a 24 kW power delivery board that converts 800 VDC to 12 VDC, developed in collaboration with NVIDIA for next-generation AI data centers. Powered by Navitas’ GaNFast technology, the board supports NVIDIA’s MGX ecosystem and streamlines power delivery to high-performance computing processors (xPUs). The solution will be showcased in NVIDIA’s AI Factory MGX Wall partner display area at the 2026 OCP Global Summit.
The new board expands Navitas’ range of 800 VDC power solutions for AI data centers, following its earlier 20 kW, 800 V-to-6 V power delivery board developed with NVIDIA. Both solutions support the shift toward high-voltage DC power distribution and the growing use of gallium nitride (GaN) and silicon carbide (SiC) technologies in advanced AI infrastructure.
Designed to deliver up to 24 kW, the board targets 97% efficiency at full load and power density above 2,000 W/in³. It uses NVIDIA’s 400 mm × 60 mm form factor and can be mounted directly on the compute motherboard near the xPUs. This arrangement helps minimize power losses while meeting the substantial current requirements of next-generation AI processors.
The board features a single-stage conversion design that converts 800 VDC directly into 12 VDC, eliminating the conventional 50 V-to-12 V intermediate bus converter (IBC). This approach reduces conversion stages, energy losses, component count, and board space while improving efficiency and reliability. The 12 V output supplies the voltage regulator module (VRM), which generates the point-of-load voltages required by the xPUs.
The primary-side power stage uses 16 NV6034 GaNFast FETs, each rated at 650 V with an on-resistance of 18 mΩ. The devices are arranged in a stacked half-bridge topology and use Navitas’ dual-cooled 8 mm × 8 mm DFN package. This implementation supports the high switching performance and power density required for compact, high-power conversion systems.
The 800 V-to-12 V PDB adds flexibility to Navitas’ broader AI power portfolio, letting system designers choose intermediate-bus voltages and voltage regulator architectures to match their point-of-load requirements. The platform supports the company’s strategy to replace conventional silicon power devices with GaN and SiC technologies across the power chain, from grid interfaces to processor-level power delivery.
