Toshiba Electronic Devices & Storage Corporation has launched the TPM1R408RH, a new 80V N-channel power MOSFET built using its advanced U-MOS11-H process technology. Designed for high-efficiency switched-mode power supplies in industrial equipment, the device is particularly suited for AI data centers and communications infrastructure, where rising power demands require lower losses, better thermal performance, and higher power density.
The new MOSFET delivers improved conduction and switching characteristics to enhance power conversion efficiency. It features a maximum drain-source on-resistance (RDS(on)) of 1.4 mΩ, around 26% lower than Toshiba’s previous-generation TPM1R908QM. It also improves the RDS(on) × Qg figure of merit by approximately 45%, helping reduce switching losses and boost overall efficiency.
The TPM1R408RH is engineered to minimize drain-source voltage spikes during switching, reducing electromagnetic interference (EMI). This simplifies the design of EMI filters and snubber circuits while minimizing the need for design revisions during power supply development.
Housed in Toshiba’s SOP Advance(E) package, the MOSFET offers about 65% lower package resistance and 15% lower thermal resistance compared to the earlier SOP Advance(N) package. These improvements enhance heat dissipation, enabling higher power output and more compact, reliable power supply designs.
To support developers, Toshiba provides SPICE simulation models and an online circuit simulator, allowing engineers to evaluate circuit performance quickly without installing additional software.
The TPM1R408RH strengthens Toshiba’s power MOSFET portfolio for industrial power conversion, targeting applications such as AI data center power supplies, communications base stations, and other systems that demand high efficiency, reduced EMI, and effective thermal management.
